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Si4214DDY-T1-E3
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( ? )
I D (A) a
Q g (Typ.)
FEATURES
? TrenchFET ?? Power MOSFET
? 100 % R g Tested
30
0.0195 at V GS = 10 V
0.023 at V GS = 4.5 V
8.5
8.6
7.1
? 100 % UIS Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Notebook System Power
? Low Current DC/DC
SO-8
D 1
D 2
S 1
G 1
1
2
8
7
D 1
D 1
S 2
G 2
3
4
6
5
D 2
D 2
G 1
G 2
Top V ie w
Orderin g Information: Si4214DDY-T1-E3 (Lead (P b )-free)
S 1
N -Channel MOSFET
S 2
N -Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
8.5
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
T A = 70 °C
I D
7.5
7.5 b, c
5.9 b, c
Pulsed Drain Current
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I SM
I AS
E AS
30
2.8
1.8 b, c
30
10
5
A
T C = 25 °C
3.1
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
2.0
2.0 b, c
W
T A = 70 °C
1.25 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Max.
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ? 10 s
Steady-State
R thJA
R thJF
52
30
62.5
40
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W.
Document Number: 67907
S11-0653-Rev. A, 11-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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